Mask and plate: a scalable front metallization with low-cost potential for III-V-based tandem solar cells enabling 31.6 % conversion efficiency.

Low-cost approaches for mass production of III-V-based photovoltaics are highly desired today. For the first time, this work presents industrially relevant mask and plate for front metallization of III-V-based solar cells replacing expensive photolithography. Metal contacts are fabricated by nickel (Ni) electroplating directly onto the solar cell's front using a precisely structured mask. Inkjet printing offers low-cost and high-precision processing for application of an appropriate plating resist. It covers the solar cell's front side with narrow openings for subsequent electroplating. The width of the resulting Ni contacts is as low as (10.5 ± 0.8) µm with sharp edges and homogenous shape. The 4 cm2-sized champion III-V-on-silicon triple-junction solar cell with mask and plate front metallization reaches a certified conversion efficiency η of (31.6 ± 1.1) % (AM1.5 g spectrum). It performs just as well as the reference sample with photolithography-structured evaporated front contacts, which reaches η = (31.4 ± 1.1) %.

Extending vision ray calibration by determination of focus distances.

The application of cameras as sensors in optical metrology techniques for three-dimensional topography measurement, such as fringe projection profilometry and deflectometry, presumes knowledge regarding the metric relationship between image space and object space. This relation is established by camera calibration and a variety of techniques are available. Vision ray calibration achieves highly precise camera calibration by employing a display as calibration target, enabling the use of active patterns in the form of series of phase-shifted sinusoidal fringes. Besides the required spatial coding of the display surface, this procedure yields additional full-field contrast information. Exploiting the relation between full-field contrast and defocus, we present an extension of vision ray calibration providing the additional information of the focus distances of the calibrated camera. In our experiments we achieve a reproducibility of the focus distances in the order of mm. Using a modified Laplacian based focus determination method, we confirm our focus distance results within a few mm.

Spray Pyrolysis of ZnO:In: Characterization of Growth Mechanism and Interface Analysis on p-Type GaAs and n-Type Si Semiconductor Materials.

Sprayed transparent conductive oxides (TCOs) are an interesting alternative to sputtered TCOs for many applications due to the possible high throughput and a simple, atmospheric pressure process of spray deposition. In this work, the growth mechanism of sprayed ZnO:In was analyzed by transmission Kikuchi diffraction (TKD) analysis of the thin film's crystal orientation, which shows a preferred orientation of the growing grains and thus proves that the deposition occurs from the gas phase. It was observed that with increasing thickness of the layer, the average grain size increases and the measured resistivity significantly reduces to ≈5-6 × 10-3 Ω cm for layers of >500 nm thickness. Since many applications also require good electrical contact formation, the contact resistivity and the interface between sprayed IZO and n-type poly-Si and p-type GaAs, two materials that are commonly used in III-V/silicon tandem solar cells, were investigated by electrical measurements and high-resolution transmission electron microscopy (TEM) analyses. The interlayers observed in TEM were investigated by energy-dispersive X-ray spectroscopy (EDS) line scans. The results suggest that oxidic interlayers at the substrate/IZO interface are responsible for the observed higher contact resistivity compared to the contact resistivity of sputtered indium tin oxide (ITO) references. The results presented in this work lead to a better understanding of the deposition process occurring in spray pyrolysis and thus allow a more targeted optimization of process parameters depending on the future requirements of the application.

Efficient vision ray calibration of multi-camera systems.

Vision ray calibration provides imaging properties of cameras for application in optical metrology by identifying an independent vision ray for each sensor pixel. Due to this generic description of imaging properties, setups of multiple cameras can be considered as one imaging device. This enables holistic calibration of such setups with the same algorithm that is used for the calibration of a single camera. Obtaining reference points for the calculation of independent vision rays requires knowledge of the parameters of the calibration setup. This is achieved by numerical optimization which comes with high computational effort due to the large amount of calibration data. Using the collinearity of reference points corresponding to individual sensor pixels as the measure of accuracy of system parameters, we derived a cost function that does not require explicit calculation of vision rays. We analytically derived formulae for gradient and Hessian matrix of this cost function to improve computational efficiency of vision ray calibration. Fringe projection measurements using a holistically vision ray calibrated system of two cameras demonstrate the effectiveness of our approach. To the best of our knowledge, neither any explicit description of vision ray calibration calculations nor the application of vision ray calibration in holistic camera system calibration can be found in literature.

Hydrophobic AlOx Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning.

A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a self-passivated Al layer is used as a mask during the plating process. In this study, Al/AlOx or Al2O3 plating masks are further functionalized by a self-assembled monolayer (SAM) of octadecyl phosphonic acid (ODPA). The ODPA adsorption is characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy in attenuated total reflectance (FTIR-ATR) (in situ), and contact angle measurements to link the surface chemical composition to wetting properties. The SAM leads to homogeneous hydrophobic surfaces on large-area textured solar cells and planar flexible printed circuit boards (PCBs), which allows reproducible patterning of narrow lines by inkjet printing of an etchant. Selective copper plating is then performed to complete the metallization process and produce Cu contacts in the patterned areas. Silicon heterojunction (SHJ) solar cells metallized by the complete sequence reached up to 22.4% efficiency on a large area.

Conductive Highly Filled Suspensions for an Electrochemical Dispensing Approach to Pattern Full-Area Thin Metal Layers by Physical Vapour Deposition.

This paper presents a systematic approach for the development of highly filled suspensions used for an electrochemical dispensing approach. Electrochemical dispensing is an alternative structuring process to locally pattern PVD full-area thin metal layers with the goal to create contacts on solar cells or circuit boards by anodic metal dissolution. Achieving a narrow patterned line width requires a dispensing paste with a high yield stress, a small particle size distribution and a good electrical conductivity. Therefore this work focuses on the formulation and characterization of dispensing pastes in terms of their rheological and electrical properties and their particle size distribution. Furthermore, the printing performance is evaluated in dispensing experiments. In this study, samples with a yield stress above 5000 Pa and an average particle size below 0.4 µm were produced, resulting in dispensed line widths below 100 µm with a high aspect ratio above 0.6. The lack of electrical conductivity was solved by adding KCl solution to the paste, which will add to the ionic conductivity of the NaNO3 basis paste formulation. With this approach, printed line widths down to 115 µm and etched line widths below 90 µm at high aspect ratio were achieved on 50 nm aluminum layers.